PART |
Description |
Maker |
AMF-5B-040080-15-25P AMF-4B-040080-15-25P AMF-6B-0 |
4000 MHz - 8000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER 12000 MHz - 18000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER 20000 MHz - 30000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER 100 MHz - 4000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER 8000 MHz - 18000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER 500 MHz - 2000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER 27500 MHz - 31000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER 10 MHz - 2000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER 2000 MHz - 4000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER 2000 MHz - 8000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER 10 MHz - 4000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER 1000 MHz - 2000 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER 100 MHz - 6000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER 37000 MHz - 41000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
|
MITEQ, Inc. MITEQ INC
|
2SD389A 2SD389AQ 2SD389P 2SD601 2SD601AR 2SD601AS |
Si NPN epitaxial planar. General amplifier. Si NPN DIFFUSED JUNCTION MESA 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236 Si NPN diffused juction mesa. Medium power amplifier.
|
Panasonic, Corp. Panasonic Corporation PANASONIC[Panasonic Semiconductor]
|
2SC4684 E000977 |
NPN EPITAXIAL TYPE (STROBE FLASH, MEDIUM POWER AMPLIFIER APPLICATIONS) From old datasheet system STROBE FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS
|
Toshiba Semiconductor
|
2SC3072 |
TRANSISTOR (STROBE FLASH/ MEDIUM POWER AMPLIFIER APPLICATIONS) Transistor Silicon NPN Epitaxial Type (PCT process) Strobe Flash Applications Medium Power Amplifier Applications
|
Toshiba Semiconductor
|
AFS1-00120025-10-13P-4 AFS2-21202400-35-5P-2 AFS4- |
120 MHz - 250 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER 21200 MHz - 24000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER 500 MHz - 1000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER 6000 MHz - 12000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER 100 MHz - 10000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER 8000 MHz - 12000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER 13200 MHz - 14000 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER 100 MHz - 4000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER 2000 MHz - 8000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER 7300 MHz - 8400 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
|
MITEQ INC
|
2SC3419 E000841 |
From old datasheet system NPN EPITAXIAL TYPE (MEDIUM POWER AMPLIFIER APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
2SB1713 2SB1714 2SB852K1 2SC2412K1 2SC41021 2SC472 |
-3A / -12V Bipolar transistor -2A / -30V Bipolar transistor High-gain Amplifier Transistor (?32V, ?0.3A) General purpose transistor (50V, 0.15A) High-voltage Amplifier Transistor (120V, 50mA) High-Frequency Amplifier Transistor (11V, 50mA, 3.2GHz) Power transistor (60V, 3A) Medium power transistor (60V, 2A) Medium power transistor (60V, 0.5A) High-gain Amplifier Transistor (32V , 0.3A) Medium Power Transistor (32V, 1A) Power Transistor (80V, 1A) Low VCE(sat) transistor (strobe flash) High-current Gain Medium Power Transistor (20V, 0.5A) Low frequency amplifier 4V Drive Nch MOS FET 10V Drive Nch MOS FET 2.5V Drive Nch MOS FET 4 Amps, 600 Volts N-CHANNEL POWER MOSFET
|
UTC ROHM[Rohm]
|
2SC3419 |
TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) MEDIUM POWER AMPLIFIER APPLICATIONS
|
TOSHIBA
|
2SC4781 |
TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) STROBO FLASH AND MEDIUM POWER AMPLIFIER APPLICATIONS
|
TOSHIBA
|
SKY65009-70LF SKY65028-70LF SKY65014-70LF SKY65008 |
250 - 2500 MHz Linear Power Amplifier Driver 0.25 MHz - 2500 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER 450 MHz-2.5 GHz Linear Power Amplifier Driver 0.25 MHz - 2700 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER InGaP Cascadable Amplifier 6000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER 250 - 2700 MHz Linear, Low Current Power Amplifier Driver 0.25 MHz - 2700 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
|
Skyworks Solutions, Inc.
|
KSC1008 |
NPN EPITAXIAL SILICON TRANSISTOR NPN (LOW FREQUENCY AMPLIFIER MEDIUM SPEED SWITCHING)
|
SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor]
|
2SC2500 |
TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) STROBE FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS
|
TOSHIBA
|